? 2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FGA20S125P rev. c3 april 2013 FGA20S125P 1250 v, 20 a shorted-anode igbt absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics notes: 1: limited by tjmax symbol description ratings unit v ces collector to emitter voltage 1250 v v ges gate to emitter voltage 25 v i c collector current @ t c = 25 o c40 a collector current @ t c = 100 o c20 a i cm (1) pulse d collector current 60 a i f diode continuous forward current @ t c = 25 o c 40 a i f diode continuous forward current @ t c = 100 o c 20 a p d maximum power dissipation @ t c = 25 o c250 w maximum power dissipation @ t c = 100 o c125 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c symbol parameter typ. max. unit r jc (igbt) thermal resistance, junction to case -- 0.6 o c / w r ja thermal resistance, junction to ambient -- 40 o c / w g c e to-3pn g c e FGA20S125P 1250 v, 20 a shorted-anode igbt features ? high speed switching ? low saturation voltage: v ce(sat) = 2.0 v @ i c = 20 a ? high input impedance ? rohs compliant applications ? induction heating, microwave oven general description using advanced field stop trenc h and shorted anode technol- ogy, fairchild ? ?s shorted-anode trench igbts offer superior con- duction and switching performances for soft switching applications. the device can operate in parallel configuration with exceptional avalanche cap ability. this device is designed for induction heating and microwave oven.
FGA20S125P 1250 v, 20 a shorted-anode igbt ? 2012 fairchild semiconductor corporation 2 www.fairchildsemi.com FGA20S125P rev. c3 package marking and ordering information electrical characteristics of the igbt t c = 25c unless otherwise noted device marking device package reel size tape width quantity FGA20S125P FGA20S125P to-3pn - - 30 symbol parameter test conditions min. typ. max. unit off characteristics i ces collector cut-off current v ce = 1250, v ge = 0v - - 1 ma i ges g-e leakage current v ge = v ges , v ce = 0v - - 500 na on characteristics v ge(th) g-e threshold voltage i c = 20ma, v ce = v ge 4.5 6.0 7.5 v v ce(sat) collector to emitter saturation voltage i c = 20a , v ge = 15v t c = 25 o c -2.02.5v i c = 20a , v ge = 15v, t c = 125 o c -2.22- v i c = 20a , v ge = 15v, t c = 175 o c -2.44 - v v fm diode forward voltage i f = 20a , t c = 25 o c - 1.75 2.4 v i f = 20a , t c = 175 o c-2.22- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 1360 - pf c oes output capacitance - 40 - pf c res reverse transfer capacitance - 26 - pf switching characcteristics t d(on) turn-on delay time v cc = 600v, i c = 20a, r g = 10 , v ge = 15v, resistive load, t c = 25 o c -10- ns t r rise time - 260 - ns t d(off) turn-off delay time - 400 - ns t f fall time - 100 - ns e on turn-on switching loss - 0.74 - mj e off turn-off switching loss - 0.50 - mj e ts total switching loss - 1.24 - mj t d(on) turn-on delay time v cc = 600v, i c = 20a, r g = 10 , v ge = 15v, resistive load, t c = 175 o c -11-ns t r rise time - 320 - ns t d(off) turn-off delay time - 420 - ns t f fall time - 250 - ns e on turn-on switching loss - 0.94 - mj e off turn-off switching loss - 1.23 - mj e ts total switching loss - 2.17 - mj q g total gate charge v ce = 600v, i c = 20a, v ge = 15v - 129 - nc q ge gate to emitter charge - 9 - nc q gc gate to collector charge - 66 - nc
FGA20S125P 1250 v, 20 a shorted-anode igbt ? 2012 fairchild semiconductor corporation 3 www.fairchildsemi.com FGA20S125P rev. c3 typical performance characteristics figure 1. typical output characteristics figure 2. typical saturation voltage chara cteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteritics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. vge 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 20 40 60 80 100 120 140 160 8v v ge = 17v 10v 9v 20v t c = 25 o c 15v 12v collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 20 40 60 80 100 120 140 160 9v 8v 17v t c = 175 o c 15v 12v 10v v ge = 20v collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 1.0 2.0 3.0 4.0 5.0 0 20 40 60 80 100 120 common emitter v ge = 15v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 01234567891011121314 0 20 40 60 80 common emitter v ce = 20v t c = 25 o c t c = 175 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 40a 20a i c = 10a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c] 4 8 12 16 20 0 5 10 15 20 i c = 10a 20a 40a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
FGA20S125P 1250 v, 20 a shorted-anode igbt ? 2012 fairchild semiconductor corporation 4 www.fairchildsemi.com FGA20S125P rev. c3 typical performance characteristics figure 7. saturation voltage vs. vge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs figure 12. turn-off characteristics vs. gate resistance gate resistance 4 8 12 16 20 0 4 8 12 16 20 i c = 10a 20a 40a common emitter t c = 175 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 5 1015202530 1 10 100 1000 10000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 0 30 60 90 120 0 3 6 9 12 15 common emitter t c = 25 o c 600v 400v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 100 1000 0.01 0.1 1 10 100 2000 1ms 10ms dc *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse 10 s 100 s collector current, i c [a] collector-emitter voltage, v ce [v] 10 20 30 40 50 60 70 1 200 common emitter v cc = 600v, v ge = 15v i c = 20a t c = 25 o c t c = 175 o c t d(on) t r switching time [ns] gate resistance, r g [ ] 5 0 10203040506070 100 1000 10000 common emitter v cc = 600v, v ge = 15v i c = 20a t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ ]
FGA20S125P 1250 v, 20 a shorted-anode igbt ? 2012 fairchild semiconductor corporation 5 www.fairchildsemi.com FGA20S125P rev. c3 typical performance characteristics figure 13. turn-on characteristics vs. figure 14.turn-off characteristics vs. collector current collector current figure 15. switching loss vs. gate resistance figure 16. switching loss vs. collector current figure 17. turn off switching soa characteristics figure 18. forward characteristics 10 20 30 40 10 100 1000 common emitter v ge = 15v, r g = 10 t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a] 10 20 30 40 100 1000 common emitter v ge = 15v, r g = 10 t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] collector current, i c [a] 10 20 30 40 50 60 70 1 10 common emitter v cc = 600v, v ge = 15v i c = 20a t c = 25 o c t c = 175 o c e on e off switching loss [mj] gate resistance, r g [ ] 0.1 10 20 30 40 100 1k 10k common emitter v ge = 15v, r g = 10 t c = 25 o c t c = 175 o c e on e off switching loss [mj] collector current, i c [a] 30 12 0.1 1 10 80 t c = 25 o c t c = 175 o c forward voltage, v f [v] forward current, i f [a] 0.5 1 10 100 1000 1 10 100 2000 safe operating area v ge = 15v, t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v]
FGA20S125P 1250 v, 20 a shorted-anode igbt ? 2012 fairchild semiconductor corporation 6 www.fairchildsemi.com FGA20S125P rev. c3 figure 19 . transient thermal impedance of igbt 1e-5 1e-4 1e-3 0.01 0.1 1 10 1e-3 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5
FGA20S125P 1250 v, 20 a shorted-anode igbt ? 2012 fairchild semiconductor corporation 7 www.fairchildsemi.com FGA20S125P rev. c3 mechanical dimensions to-3pn dimensions in millimeters
FGA20S125P 1250 v, 20 a shorted-anode igbt ? 2012 fairchild semiconductor corporation 8 www.fairchildsemi.com FGA20S125P rev. c3 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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